? 2011 ixys corporation, all rights reserved ds99608c(03/11) ixgh32n120a3 IXGT32N120A3 genx3 tm 1200v igbts ultra-low vsat pt igbts for up to 3 khz switching features z optimized for low conduction losses z international standard packages advantages z high power density z low gate drive requirement applications z power inverters z capacitor discharge z ups z motor drives z smps z pfc circuits z battery chargers z welding machines z lamp ballasts z inrush current protection circuits symbol test conditions maximum ratings v ces t j = 25c to 150c 1200 v v cgr t j = 25c to 150c, r ge = 1m 1200 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 75 a i c110 t c = 110c 32 a i cm t c = 25c, 1ms 230 a i a t c = 25c 20 a e as t c = 25c 120 mj ssoa v ge = 15v, t j = 125c, r g = 20 i cm = 150 a (rbsoa) clamped inductive load v ce 0.8 ? v ces p c t c = 25c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.063in) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-247) 1.13/10 nm/lb.in. weight to-247 6.0 g to-268 4.0 g v ces = 1200v i c110 = 32a v ce(sat) 2.35v symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 1200 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces , v ge = 0v 50 a t j = 125c 1 ma i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = i c110 , v ge = 15v, note 1 2.35 v i c = 400a, v ge = 30v, note 1 11 v g = gate c = collector e = emitter tab = collector to-247 (ixgh) g e c (tab) c to-268 (ixgt) e g c (tab)
ixgh32n120a3 IXGT32N120A3 ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 to-247 ad outline to-268 outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc terminals: 1 - gate 2 - collector 3 - emitter 1 2 3 terminals: 1 - gate 2, 4 - collector 3 - emitter symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 50a, v ce = 10v, note 1 14 20 s i c(on) v ce = 10v, v ge = 15v, note 1 94 a c ies 2150 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 130 pf c res 14 pf q g 89 nc q ge i c = 50a, v ge = 15v, v ce = 0.5 ? v ces 15 nc q gc 34 nc t d(on) 39 ns t r 200 ns t d(off) 140 ns t f 1240 ns r thjc 0.42 c/w r thck to-247 0.21 c/w resistive switching times, t j = 25c v ge = 20v, v ce = 0.8 ? v ces , i c = 100a r g = 10 (external) note 1. pulse test, t 300 s, duty cycle, d 2%.
? 2011 ixys corporation, all rights reserved fig. 1. output characteristics @ t j = 25oc 0 20 40 60 80 100 120 140 160 180 200 0123456 v ce - volts i c - amperes v ge = 30v 25v 20v 10v 15v fig. 2. extended output characteristics @ t j = 25oc 0 25 50 75 100 125 150 175 200 225 250 0 5 10 15 20 v ce - volts i c - amperes v ge = 30v 25v 20v 15v 10v fig. 3. output characteristics @ t j = 125oc 0 20 40 60 80 100 120 140 160 180 200 01234567 v ce - volts i c - amperes v ge = 30v 25v 20v 15v 10v fig. 4. dependence of v ce(sat) on junction temperature 0 1 2 3 4 5 6 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 192a i c = 96a i c = 32a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1 2 3 4 5 6 7 8 9 10 6 8 10 12 14 16 18 20 22 24 26 28 30 v ge - volts v ce - volts i c = 150a t j = 25oc 100a 50a fig. 6. input admittance 0 10 20 30 40 50 60 70 80 90 100 34567891011 v ge - volts i c - amperes t j = - 40oc 25oc 125oc ixgh32n120a3 IXGT32N120A3
ixgh32n120a3 IXGT32N120A3 ixys reserves the right to change limits, test conditions, and dimensions. fig. 7. transconductance 0 4 8 12 16 20 24 0 102030405060708090100 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 12. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res fig. 8. dependence of bv ces & v (th)ge on junction temperature 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v (th)ge - normalized 0.91 0.94 0.97 1.00 1.03 1.06 1.09 1.12 1.15 1.18 bv ces - normalized v (th)ge bv ces fig. 9. single-pulsed avalanche energy vs. junction temperature 20 40 60 80 100 120 140 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e as - millijoules i c = 20a v ge = 15v fig. 10. resistive turn-on rise time vs. gate voltage 100 300 500 700 900 1100 1300 8 1012141618202224262830 v ge - volts t r - nanoseconds r g = 10 ? , i c = 100a v ce = 960v t j = 125oc t j = 25oc fig. 11. gate charge 0 2 4 6 8 10 12 14 16 0 102030405060708090 q g - nanocoulombs v ge - volts v ce = 600v i c = 50a i g = 10ma
? 2011 ixys corporation, all rights reserved fig. 18. resistive turn-off switching times vs. collector current 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 50 60 70 80 90 100 110 120 130 140 150 i c - amperes t f - nanoseconds 110 120 130 140 150 160 170 180 190 200 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 10 ? , v ge = 20v v ce = 960v t j = 125oc t j = 25oc fig. 16. resistive turn-off switching times vs. gate resistance 1890 1900 1910 1920 1930 1940 1950 1960 1970 1980 10 15 20 25 30 35 40 45 50 r g - ohms t f - nanoseconds 50 100 150 200 250 300 350 400 450 500 t d(off) - nanoseconds t f t d(off ) - - - - t j = 125oc, v ge = 20v v ce = 960v i c = 100a i c = 50a, 100a, 150a fig. 13. resistive turn-on switching times vs. gate resistance 220 240 260 280 300 320 340 360 380 400 420 10 14 18 22 26 30 34 38 42 46 50 r g - ohms t r - nanoseconds 37 40 43 46 49 52 55 58 61 64 67 t d ( on ) - nanoseconds t r t d(on) - - - - t j = 125oc, v ge = 20v v ce = 960v i c = 100a i c = 50a i c = 150a fig. 17. resistive turn-off switching times vs. junction temperature 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 110 120 130 140 150 160 170 180 190 200 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 10 ? , v ge = 20v v ce = 960v i c = 150a, 100a, 50a fig. 15. resistive turn-on rise time vs. collector current 160 180 200 220 240 260 280 300 320 60 65 70 75 80 85 90 95 100 105 110 115 120 i c - amperes t r - nanoseconds r g = 10 ? , v ge = 20v v ce = 960v t j = 125oc t j = 25oc fig. 14. resistive turn-on rise time vs. junction temperature 160 180 200 220 240 260 280 300 320 340 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 10 ? , v ge = 20v v ce = 960v i c = 150a i c = 50a i c = 100a ixgh32n120a3 IXGT32N120A3
ixgh32n120a3 IXGT32N120A3 ixys reserves the right to change limits, test conditions, and dimensions. fig. 20. maximum transient thermal impedance 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 19. reverse-bias safe operating area 0 20 40 60 80 100 120 140 160 200 300 400 500 600 700 800 900 1000 1100 1200 v ce - volts i c - amperes t j = 125oc r g = 20 ? dv / dt < 10v / ns ixys ref: ixg_32n120a3(4a)03-04-11-a
|
